The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the
crystal structure
variation of the number of charge carriers with temperature
type of bonding
variation of scattering mechanism with temperature
As we have learnt,
Number of electrons or holes -
- wherein
Eg = Energy gap
K = Boltzmann Constant
T = Temperature in kelvin
On increasing temperature, the number of current carried increases
In metal/conductor, number of force electron is maximum at room temperature hence with increasing temperature, no change in concentration of electron takes place
So resistance increases with increase in temperature due to collision of electrons.
In semiconductor more number of electron become free due to increase in temperature & hence resistance will decrease.
Option 1)
crystal structure
Option 2)
variation of the number of charge carriers with temperature
Option 3)
type of bonding
Option 4)
variation of scattering mechanism with temperature
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