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The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the

  • Option 1)

    crystal structure

  • Option 2)

    variation of the number of charge carriers with temperature

  • Option 3)

    type of bonding

  • Option 4)

    variation of scattering mechanism with temperature

 

Answers (1)

best_answer

As we have learnt,

 

Number of electrons or holes -

n_{e}= n_{\lambda }= AT^{3/2}e^{-Eg /2KT}
 

- wherein

Eg = Energy gap

K = Boltzmann Constant

T = Temperature in kelvin

On increasing temperature,  the number of current carried increases

 

 In metal/conductor, number of force electron is maximum at room temperature hence with increasing temperature, no change in concentration of electron takes place

So resistance increases with increase in temperature due to collision of electrons.

In semiconductor more number of electron become free due to increase in temperature & hence resistance will decrease.

 


Option 1)

crystal structure

Option 2)

variation of the number of charge carriers with temperature

Option 3)

type of bonding

Option 4)

variation of scattering mechanism with temperature

Posted by

Avinash

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