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- Which of the following is not true for n-type semiconductors?Option: 1 They are formed due to dopping of pentavalent atoms in an intrinsic semic
Which of the following is not true for n-type semiconductors?
They are formed due to dopping of pentavalent atoms in an intrinsic semiconductor
Energy level of impurity is just above the valence bond of intrinsic semiconductor
Energy level of impurity is just below the conduction band of intrinsic semiconductor
Answers (1)
As we have learned
n-type semiconductor -
Here the base semiconductor (e.g. pure Si or Ge) is mixed with pentavalent doping material
(e.g. Phosphorous)
- wherein
1) ne >>nh
2) There is a donor energy level between the valence band and conduction band. Just below the conduction band.
We know that n-type semiconductors are manufactured by diffusing a small number of pentavalent atoms (like phosphorus in silicon crystals).
These pentavalent atoms donate their one electron for the conduction of electricity and thus, the majority of charge carriers are electrons in n-type semiconductors. The number of electrons is much higher than the number of holes.
Fig- Energy Bond of n-type S.C(Phosphorous in Silicon)
Since phosphorus has already completed its octet, the extra electron remains loosely bound to it. The energy level of the extra electron is close to C.B. So it can easily jump to C.B. and conduct electricity.
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