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- Which of the following is not true for p-type semiconductor? Option: 1 They are formed due to dopping of trivalent atoms in the intri
Which of the following is not true for p-type semiconductor?
They are formed due to dopping of trivalent atoms in the intrinsic S.C.
Energy level of impurity is just above the valence band of the intrisic S.C.
Energy level of impurity is just below teh C.B. of intrinsic S.C.
Answers (1)
p - type semiconductor -
Here the base semiconductor (i.e.pure Si or Ge ) is mixed with tetravalent doping material (e.g. Al )
- wherein
1) nh >>ne
2) There is an acceptor level just above the valence band .
We know that p-type semiconductor are manufactured by diffusing a small amount of trivalent atoms(like Al, Ga,Sn in silicon crystals).
These trivalent atoms are electron deficient and thus, accept one electron from neighbouring Si atoms to complete their octet. By acccepting electron from Si, they create a hole in intrinsic S.C.
Majority of charge carriers in p-type S.C. are holes which are much greater in number as compared to electrons.
Energy level of impurity (Al,Ga) is just above the valence bond of intrinsic S.C. Due to the small gap in energy, electrons from valence band easily jump to impurity level, leaving a hole behind. These holes conduct electricity in p-type semiconductors.
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