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  • A junction has acceptor impurity concentration of <img alt="\mathrm{ 10^{17} \mathrm{~cm}^{-3}}"

A \mathrm{p-n} junction has acceptor impurity concentration of \mathrm{ 10^{17} \mathrm{~cm}^{-3}} in the \mathrm{P} side and donor impurity concentration of \mathrm{10^{16} \mathrm{~cm}^{-3}} in the \mathrm{N} side. What is the contact potential at the junction? ( \mathrm{k T=} thermal energy, intrinsic carrier concentration \mathrm{n_i=1.4 \times 10^{10} \mathrm{~cm}^{-3}} )
 

Option: 1

\mathrm{\left(\frac{k T}{e}\right) \ln \left(4 \times 10^{12}\right)}
 


Option: 2

\mathrm{\left(\frac{k T}{e}\right) \ln \left(2.5 \times 10^{23}\right)}
 


Option: 3

\mathrm{\left(\frac{k T}{e}\right) \ln \left(10^{23}\right)}
 


Option: 4

\mathrm{\left(\frac{k T}{e}\right) \ln \left(10^9\right)}


Answers (1)

best_answer

Constant potential at the junction

\mathrm{ V_{\text {constant }}=\frac{k T}{e} \ln \left(\frac{n_a n_d}{n_i^2}\right) }

\mathrm{ V_{\text {constant }}=\frac{k T}{e} \ln \left(\frac{10^{17} \times 10^{16}}{\left(1.4 \times 10^{10}\right)^2}\right)=\frac{k T}{e} \ln \left(4 \times 10^{12}\right)}

Hence option 1 is correct.


 

Posted by

Pankaj Sanodiya

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