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Carbon, silicon and germanium have four valence electrons each. At room temperature which one of the following statements is most appropriate ?

  • Option 1)

    The number of free electrons for conduction is significant only in Si and Ge but small in C.

  • Option 2)

    The number of free conduction electrons is significant in C but small in Si and Ge .

  • Option 3)

    The number of free conduction electrons is negligibly small in all the three.

  • Option 4)

    The number of free electrons for conduction is significant in all the three .

 

Answers (1)

As we have learnt,

 

p - type semiconductor -

Here the base semiconductor (i.e.pure Si or Ge ) is mixed with tetravalent doping material (e.g. Al )

- wherein

1) nh >>ne

2) There is an acceptor level just above  the valence band .

 

 

Semiconductor -

Energy gap between valence band and conduction band is less than 3 e.v.

- wherein

1) \Delta E_^{g} lies between conductor & insulator 

2) Both electron and holes are responsible for conductivity .

3)    At 0 K behave like an insulator (Si,Ge)

 

 At room temperature number of free electron is significant only in Si and Ge because the energy gap between its valence and conduction band is small and can be over come by thermal energy at room temperature.

 

 


Option 1)

The number of free electrons for conduction is significant only in Si and Ge but small in C.

Option 2)

The number of free conduction electrons is significant in C but small in Si and Ge .

Option 3)

The number of free conduction electrons is negligibly small in all the three.

Option 4)

The number of free electrons for conduction is significant in all the three .

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Vakul

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