The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature
increases exponentially with increasing band gap
decreases exponentially with increasing band gap
decreases with increasing temperature
is independent of the temperature and the band gap
For an intrinsic semiconductor, at a finite temperature, the probability of electrons existing in the conduction band decreases exponentially with an increasing bandgap
The relation is
where Energy band gap
Boltzmann's constant.
Hence, 2 is the correct option.
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