Get Answers to all your Questions

header-bg qa

(a) Explain how a potential barrier is developed in a p-n junction diode.

(b) Draw the circuit arrangement for studying the V-I characteristics of a p-n junction diode in reverse bias. Plot the V-I characteristics in this case.

 

 

Answers (1)

(a)

Due to the concentration gradient across p and n sides of a diode, holes diffuse from p side to n side and electrons diffuse from n side to p side giving rise to the development of immobile positive charges on the n side and the negative charges on the p side across the junction. thus a  potential barrier is formed at the junction.

(b) V-I Graph:-

Posted by

Safeer PP

View full answer

Crack CUET with india's "Best Teachers"

  • HD Video Lectures
  • Unlimited Mock Tests
  • Faculty Support
cuet_ads