(a) Explain how a potential barrier is developed in a p-n junction diode.
(b) Draw the circuit arrangement for studying the V-I characteristics of a p-n junction diode in reverse bias. Plot the V-I characteristics in this case.
(a)
Due to the concentration gradient across p and n sides of a diode, holes diffuse from p side to n side and electrons diffuse from n side to p side giving rise to the development of immobile positive charges on the n side and the negative charges on the p side across the junction. thus a potential barrier is formed at the junction.
(b) V-I Graph:-