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  • Stuck here, help me understand: Which one of the followingstatement is FALSE?

Which one of the following statement is FALSE?

  • Option 1)

    Pure Si doped with trivalent impurities gives a p-type semiconductor.

  • Option 2)

    Majority carriers in a n-type semiconductor are holes

  • Option 3)

    Minority carriers in a p-type semiconductor are electrons

  • Option 4)

    The resistance of intrinsic semiconductor decreases with increase of temperature

 

Answers (1)

 

p - type semiconductor -

Here the base semiconductor (i.e.pure Si or Ge ) is mixed with tetravalent doping material (e.g. Al )

- wherein

1) nh >>ne

2) There is an acceptor level just above  the valence band .

 

 

n - type semiconductor -

Here the base semiconductor (e.g. pure Si or Ge) is mixed with pentavalent doping material

(e.g. Phosphorous)

- wherein

1) ne >>nh

2) There is donor energy level between valence band and conduction band. Just below conduction band.

 

 In n-type:

 doping agent is pentavalent majority carrier -electron minority carrier- holes

In p-type:

doping agent - Trivalent

majority carrier - holes

minority carrier - electron

Resistance of intrinsic semiconductor decreases with the increase of temperature.

 

 


Option 1)

Pure Si doped with trivalent impurities gives a p-type semiconductor.

This option is incorrect

Option 2)

Majority carriers in a n-type semiconductor are holes

This option is correct

Option 3)

Minority carriers in a p-type semiconductor are electrons

This option is incorrect

Option 4)

The resistance of intrinsic semiconductor decreases with increase of temperature

This option is incorrect

Posted by

Vakul

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