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  • The barrier potential of a p - n junction depends on : (a) type of semi conductor material (b) amount of doping (c) temperature Which one of the following is

The barrier potential of a p - n junction depends on :

(a) type of semi conductor material

(b) amount of doping

(c) temperature

Which one of the following is correct?

Option: 1

(a) and (b) only


Option: 2

(b) only


Option: 3

(b) and (c) only


Option: 4

(a),(b) and (c)


Answers (1)

best_answer

As we learnt in

Semiconductor -

Energy gap between valence band and conduction band is less than 3 e.v.

- wherein

1) Delta E_^{g} lies between conductor & insulator 

2) Both electron and holes are responsible for conductivity .

3)    At 0 K behave like an insulator (Si,Ge)

 

 

 

The barrier potential depend on the material used to make p-n junction diode (whether it is Si or Ge). If also depend on amount of doping due to which the number of majority carrier will change. It also depends on temperature due to which the number of minority carriers will change. 

Correct option is 4.

Posted by

Irshad Anwar

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