The increase in the width of the depeltion region in a p-n junction diode is due to:
Option: 1 forward bias only
Option: 2 reverse bias only
Option: 3 both forward bias reverse bias
Option: 4 increase in forward current
In reverse biasing, the positive terminal of the battery is connected to the n-type whereas the negative terminal is connected to the p-type junction. So the positive terminal tend to pull the electrons (near to the depletion layer) in n-type towards itself whereas the negative terminal pulls the holes towards itself which results in increase in the width of depletion layer.