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In an unbiased $p-n$ junction, holes diffues from the p- region to n-region because of

• Option 1)

the potential differnce across the $p-n$ junction.

• Option 2)

the attracttion of free electrons of n-region

• Option 3)

the higher hole concentration in p-region than that in n-region

• Option 4)

the higher concentration of electrons in the n-region than that in the p-region

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Intrinsic semiconductor -

It is a pure semiconductor

e.g. pure Ge, or Pure Si

- wherein

low conductivity

ne = nh

hole will diffuse from higher concentration region to lower concentration region to concentration region i.efropm p to n.

Option 1)

the potential differnce across the $p-n$ junction.

This option is incorrect

Option 2)

the attracttion of free electrons of n-region

This option is incorrect

Option 3)

the higher hole concentration in p-region than that in n-region

This option is correct

Option 4)

the higher concentration of electrons in the n-region than that in the p-region

This option is incorrect

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