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  • The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon p-n junctions areOption: 1 drift in forward bias, diffusi

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon p-n junctions are

Option: 1

drift in forward bias, diffusion in reverse bias


Option: 2

diffusion in forward bias, drift in reverse biasgr


Option: 3

diffusion in both forward and reverse bias


Option: 4

drift in both forward and reverse bias.


Answers (1)

best_answer

 

 

 

 

 

Drift current flows form p-side to n-side. Diffusion current flows from n-side to p-side. In forward biasing, drift current is greater than the diffusion current. In reverse biasing, the diffusion current is greater than the drift current.

Option (2) represents the answer.

Posted by

Ritika Jonwal

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