When $\dpi{100} p-n$ junction diode is forward biased, then Option 1) the depletion region is reduced and barrier height is increased Option 2) the depletion region is widened and barrier height is reduced. Option 3) both the depletion region and barrier height are reduced Option 4) both the depletion region and barrier height are increased

Answers (1)

As we learnt in

Dynamic Resistance -

$R_{d}= \frac{dv}{di}$

- wherein

Since slope of potential vs current graph is non uniform hence resistance keep changing .

In forward Biased case both depletion region and barrier height decreases and hence current increases.

Correct option is 3.

Option 1)

the depletion region is reduced and barrier height is increased

This is an incorrect option.

Option 2)

the depletion region is widened and barrier height is reduced.

This is an incorrect option.

Option 3)

both the depletion region and barrier height are reduced

This is the correct  option.

Option 4)

both the depletion region and barrier height are increased

This is an incorrect option.

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