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The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the

  • Option 1)

    crystal structure

  • Option 2)

    variation of the number of charge carriers with temperature

  • Option 3)

    type of bonding

  • Option 4)

    variation of scattering mechanism with temperature .

 

Answers (1)

best_answer

As we learnt in

Number of electrons or holes -

n_{e}= n_{\lambda }= AT^{3/2}e^{-Eg /2KT}
 

- wherein

Eg = Energy gap

K = Boltzmann Constant

T = Temperature in kelvin

On increasing temperature,  the number of current carried increases

 

 For Conductor

As we increase the temperature, the frequency of collision increases and hence resistance also increases. 

For Semiconductor

As we increase the temperature, the frequency of collision increases but number of free electrons also increases. The dominant factor is number of free electron and hence specific resistance of semiconductor decreases with increasing temperature.

Correct option is 2.

 


Option 1)

crystal structure

This is an incorect option.

Option 2)

variation of the number of charge carriers with temperature

This is the corect option.

Option 3)

type of bonding

This is an incorect option.

Option 4)

variation of scattering mechanism with temperature .

This is an incorect option.

Posted by

prateek

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