The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the
crystal structure
variation of the number of charge carriers with temperature
type of bonding
variation of scattering mechanism with temperature .
As we learnt in
Number of electrons or holes -
- wherein
Eg = Energy gap
K = Boltzmann Constant
T = Temperature in kelvin
On increasing temperature, the number of current carried increases
For Conductor
As we increase the temperature, the frequency of collision increases and hence resistance also increases.
For Semiconductor
As we increase the temperature, the frequency of collision increases but number of free electrons also increases. The dominant factor is number of free electron and hence specific resistance of semiconductor decreases with increasing temperature.
Correct option is 2.
Option 1)
crystal structure
This is an incorect option.
Option 2)
variation of the number of charge carriers with temperature
This is the corect option.
Option 3)
type of bonding
This is an incorect option.
Option 4)
variation of scattering mechanism with temperature .
This is an incorect option.
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