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  • The I-V characteristics of a P -N junction diode is shown in figure. The approximate dynamic resistance  (in <img alt="\Omega" src="https://entrancecorner.oncodecogs.com/gif.latex?%5COmeg

The I-V characteristics of a P -N junction diode is shown in figure. The approximate dynamic resistance  (in \Omega ) of the P N junction when A forward bias of 1 V is applied.

Option: 1

40


Option: 2

20


Option: 3

60


Option: 4

80


Answers (1)

best_answer

As we learn

To draw the I-V characteristics curve of P-N junction In forward bias -

 

 

When P side of P-N junction is connected to the positive terminal of source it is said forward biased.

Note: least count and zero error of voltmetre  IN. 

* P-N Junction a resistance of 10\Omega is connected in series with diode

* Power supply is switched on and P.D across diode increases gradually.

* The value is 0.05 V

 The current at 1 v is 10 mA and at 1.2 V is 15 m A. The dynamic resistance is this region is 

R=\frac{\Delta V}{\Delta i}=\frac{0.2 v}{5 ma}= 40\Omega

 

 

 

 

 

 

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