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Which one of the following statement is FALSE?
- Option 1)
Pure Si doped with trivalent impurities gives a p-type semiconductor.
- Option 2)
Majority carriers in a n-type semiconductor are holes
- Option 3)
Minority carriers in a p-type semiconductor are electrons
- Option 4)
The resistance of intrinsic semiconductor decreases with increase of temperature
Answers (1)
p - type semiconductor -
Here the base semiconductor (i.e.pure Si or Ge ) is mixed with tetravalent doping material (e.g. Al )
- wherein
1) nh >>ne
2) There is an acceptor level just above the valence band .
n - type semiconductor -
Here the base semiconductor (e.g. pure Si or Ge) is mixed with pentavalent doping material
(e.g. Phosphorous)
- wherein
1) ne >>nh
2) There is donor energy level between valence band and conduction band. Just below conduction band.
In n-type:
doping agent is pentavalent majority carrier -electron minority carrier- holes
In p-type:
doping agent - Trivalent
majority carrier - holes
minority carrier - electron
Resistance of intrinsic semiconductor decreases with the increase of temperature.
Option 1)
Pure Si doped with trivalent impurities gives a p-type semiconductor.
This option is incorrect
Option 2)
Majority carriers in a n-type semiconductor are holes
This option is correct
Option 3)
Minority carriers in a p-type semiconductor are electrons
This option is incorrect
Option 4)
The resistance of intrinsic semiconductor decreases with increase of temperature
This option is incorrect
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