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Which of the following impurities is most commonly used as a dopant in silicon crystal?

Option: 1

Boron


Option: 2

Carbon


Option: 3

Nitrogen


Option: 4

oxygen


Answers (1)

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Boron is the most commonly used impurity as a dopant in silicon crystal. When boron atoms are introduced into silicon crystal as a dopant, it is called p-type doping.

In p-type doping, a small amount of boron atoms are intentionally introduced into the silicon crystal lattice, where they replace some of the silicon atoms. Boron atoms have one less valence electron than silicon atoms, so when they replace a silicon atom in the lattice, there is one less electron available for bonding. This creates a hole in the crystal lattice, which behaves as a positive charge carrier.

These holes in the crystal lattice can move through the material like electrons do, but they carry a positive charge. This makes p-type doped silicon an important material for electronic devices such as transistors, as the holes can be used to create p-n junctions and other important electrical properties.

Boron is a popular choice for p-type doping because it has a small atomic radius, allowing it to fit into the silicon crystal lattice without disrupting the overall structure. It also has a low ionisation energy, meaning it is relatively easy to ionise and create the desired positive charge carriers.

Carbon, nitrogen, and oxygen can also be used as dopants in silicon, but they are typically used for n-type doping, where they introduce additional electrons into the crystal lattice. However, boron remains the most commonly used dopant for p-type doping in silicon.

Posted by

himanshu.meshram

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