Which of the following statements is not true?
The resistance of intrinsic semiconductors decrease with increase of temperature
Doping pure Si with trivalent impurities give P-type semiconductors
The majority carriers in N-type semiconductors are holes
A PN-junction can act as a semiconductor diode
In N-type semiconductors majority of charge carriers are electrons. The pentavalent impurity or dopant elements are added to the N-type semiconductor to increase the number of electrons for conduction.
Hence the correct option is (3).
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