For transistor action:
(1) Base-emitter and collector regions should have similar size doping concentrations.
(2) The base region must be very thin and lightly doped.
(3) The emitter-base junction is forward biased and base-collector junction is reverse based.
(4) Both the emitter-base junction as well as the base-collector junction are forward biased
(a) (3), (4)
(b) (4), (1)
(c) (1), (2)
(d) (2), (3)
Transistor -
Three layered semiconducting device .
NPN or PNP
- wherein
1. Emitter is heavily doped
2. collector is moderately doped .
3. Base is lightly doped & very thin
Option 1)
(a) (3), (4)
This option is incorrect
Option 2)
(b) (4), (1)
This option is incorrect
Option 3)
(c) (1), (2)
This option is incorrect
Option 4)
(d) (2), (3)
This option is correct