Browse by Stream
QnA
Home
QnA
Go To Your Study Dashboard

Get Answers to all your Questions

header-bg qa
  • Home
  • NCERT
  • The breakdown in a reverse biased p–n junction diode is more likely to occur due to A. large velocity of the minority charge carriers if the doping concentration is small. B. large velocity of the minority charge carriers if the doping concentration is l

The breakdown in a reverse-biased p–n junction diode is more likely to occur due to
A. large velocity of the minority charge carriers if the doping concentration is small.
B. large velocity of the minority charge carriers if the doping concentration is large.
C. strong electric field in a depletion region if the doping concentration is small.
D. strong electric field in the depletion region if the doping concentration is large.

Answers (1)

The correct answer is the option a and d

Explanation:-

Reverse biasing is when the positive terminal of the battery is connected to the N-crystal and the negative terminal of the battery is connected to P-crystal. In reverse biasing, ionization takes place because the minority charge carriers get accelerated due to reverse biasing.

They strike with the electrons which in turn increase the number of charge carriers. When the doping region is large, there will be a large number of ions in the depletion region. This will give rise to a strong electric field.

Posted by

infoexpert24

View full answer

Similar Questions

Latest Question